首页 >K4D263238A-GC>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh | SamsungSamsung Group 三星三星半导体 | Samsung | ||
128MbitGDDRSDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi | SamsungSamsung Group 三星三星半导体 | Samsung | ||
128MbitGDDRSDRAM GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi | SamsungSamsung Group 三星三星半导体 | Samsung | ||
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung Group 三星三星半导体 | Samsung | ||
1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp | SamsungSamsung Group 三星三星半导体 | Samsung |
详细参数
- 型号：
K4D263238A-GC
- 制造商：
SAMSUNG
- 制造商全称：
Samsung semiconductor
- 功能描述：
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
2023+ |
FBGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
SAMSUNG |
21+ |
FBGA |
35200 |
一级代理/放心采购 |
询价 | ||
SAMSUNG |
09+ |
BGA |
5500 |
原装无铅,优势热卖 |
询价 | ||
SAMS |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
SAMSUNG |
04+ |
BGA |
1785 |
全新原装进口自己库存优势 |
询价 | ||
SAMSUNG |
04+ |
BGA |
7 |
询价 | |||
SAMSUNG |
16+ |
QFP |
2500 |
进口原装现货/价格优势! |
询价 | ||
SAMSUNG |
23+ |
BGA |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
SAM |
23+ |
BGA |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
SAMSUNG |
22+ |
BGA-144 |
4650 |
询价 |
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