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K4D263238F

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh

SamsungSamsung Group

三星三星半导体

K4D263238F-QC40

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh

SamsungSamsung Group

三星三星半导体

K4D263238F-QC50

1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh

SamsungSamsung Group

三星三星半导体

K4D263238A

1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp

SamsungSamsung Group

三星三星半导体

K4D263238D

1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh

SamsungSamsung Group

三星三星半导体

K4D263238E

1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp

SamsungSamsung Group

三星三星半导体

K4D263238G-GC

128MbitGDDRSDRAM

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

K4D263238G-VC

128MbitGDDRSDRAM

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

K4D263238K

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

K4D263238M

1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp

SamsungSamsung Group

三星三星半导体

详细参数

  • 型号:

    K4D263238F

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

供应商型号品牌批号封装库存备注价格
SAMSUNG
21+
QFP
50000
全新原装正品现货,支持订货
询价
SAMSUNG
1607+
QFP
31
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SAMSUNG/三星
2023+
QFP
6893
专注全新正品,优势现货供应
询价
SAMSUNG
23+
QFP
2531
原厂原装正品
询价
SAMSUNG
589220
16余年资质 绝对原盒原盘 更多数量
询价
SAMSUNG
2023+
QFP
700000
柒号芯城跟原厂的距离只有0.07公分
询价
SAMSUNG
23+
QFP
50
询价
SAM
23+
QFP
35890
询价
SAMSUNG?
23+
QFP
2500
绝对全新原装!现货!特价!请放心订购!
询价
SAMSUNG
2017+
QFP
25896
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
更多K4D263238F供应商 更新时间2024-4-30 13:00:00