DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

文件：1.0854 Mbytes 页数：59 Pages

Samsung

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DDR3 SDRAM Memory

文件：1.38881 Mbytes 页数：32 Pages

Samsung

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DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

文件：1.0854 Mbytes 页数：59 Pages

Samsung

三星

DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

文件：1.0854 Mbytes 页数：59 Pages

Samsung

三星

DDP 4Gb B-die DDR3 SDRAM Specification

Key Features • JEDEC standard 1.5V ± 0.075V Power Supply • VDDQ = 1.5V ± 0.075V • 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin • 8 Banks • Posted CAS • Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10 • Programmable Additive Latency: 0,

文件：1.0854 Mbytes 页数：59 Pages

Samsung

三星