首页>K4B4G0846B-MCF8>规格书详情
K4B4G0846B-MCF8中文资料三星数据手册PDF规格书
K4B4G0846B-MCF8规格书详情
Key Features
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
667MHz fCK for 1333Mb/sec/pin
• 8 Banks
• Posted CAS
• Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10
• Programmable Additive Latency: 0, CL-2 or CL-1 clock
• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6
(DDR3-1066) and 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting
address “000” only), 4 with tCCD = 4 which does not allow seamless
read or write [either On the fly using A12 or MRS]
• Bi-directional Differential Data-Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at
85°C < TCASE < 95 °C
• Asynchronous Reset
• Package : 78 balls FBGA - x4/x8
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free
产品属性
- 型号:
K4B4G0846B-MCF8
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
DDP 4Gb B-die DDR3 SDRAM Specification
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SEC/上优 |
24+ |
NA/ |
3273 |
原装现货,当天可交货,原型号开票 |
询价 | ||
SAMSUNG |
2016+ |
BGA |
3360 |
只做原装,假一罚十,公司优势内存型号! |
询价 | ||
SAMSUNG |
13+ |
BGA |
47 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SAMSUNG/三星 |
25+ |
BGA |
54815 |
百分百原装现货,实单必成,欢迎询价 |
询价 | ||
SAMSUNG/三星 |
22+ |
78 FBGA |
4500 |
三星系列优势渠道 |
询价 | ||
SAMSUNG(三星) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
SAMSUNG |
24+ |
FBGA78 |
90000 |
专营三星全线品牌假一赔万原装进口货可开增值税发票 |
询价 | ||
SAMSUNG/三星 |
24+ |
BGA |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
SAMSUNG/三星 |
1950+ |
FBGA |
4856 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
SAMSUNG |
25+23+ |
FBGA |
12519 |
绝对原装正品全新进口深圳现货 |
询价 |