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K4B4G0446B-MCH9中文资料三星数据手册PDF规格书

K4B4G0446B-MCH9
厂商型号

K4B4G0446B-MCH9

功能描述

DDP 4Gb B-die DDR3 SDRAM Specification

文件大小

1.0854 Mbytes

页面数量

59

生产厂商 Samsung semiconductor
企业简称

SAMSUNG三星

中文名称

三星半导体官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-2 23:01:00

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K4B4G0446B-MCH9规格书详情

Key Features

• JEDEC standard 1.5V ± 0.075V Power Supply

• VDDQ = 1.5V ± 0.075V

• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,

667MHz fCK for 1333Mb/sec/pin

• 8 Banks

• Posted CAS

• Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10

• Programmable Additive Latency: 0, CL-2 or CL-1 clock

• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6

(DDR3-1066) and 7 (DDR3-1333)

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with starting

address “000” only), 4 with tCCD = 4 which does not allow seamless

read or write [either On the fly using A12 or MRS]

• Bi-directional Differential Data-Strobe

• Internal(self) calibration : Internal self calibration through ZQ pin

(RZQ : 240 ohm ± 1)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at

85°C < TCASE < 95 °C

• Asynchronous Reset

• Package : 78 balls FBGA - x4/x8

• All of Lead-Free products are compliant for RoHS

• All of products are Halogen-free

产品属性

  • 型号:

    K4B4G0446B-MCH9

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    DDP 4Gb B-die DDR3 SDRAM Specification

供应商 型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
24+
NA/
18250
原装现货,当天可交货,原型号开票
询价
SAMSUNG
2016+
FBGA
2000
只做原装,假一罚十,公司优势内存型号!
询价
SAMSUNG
1844+
FBGA
6528
只做原装正品假一赔十为客户做到零风险!!
询价
SAMSUNG/三星
25+
FBGA96
880000
明嘉莱只做原装正品现货
询价
SMA
23+
NA
110
专做原装正品,假一罚百!
询价
SAMSUNG
25+23+
BGA
32783
绝对原装正品全新进口深圳现货
询价
SAMSUNG/三星
24+
FBGA96
30000
房间原装现货特价热卖,有单详谈
询价
SAMSANG
19+
FBGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SAMSUNG
23+
FBGA
8000
只做原装现货
询价
SAMSUNG
23+
FBGA
7000
询价