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K4B1G0846C-CF8

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

文件:1.25538 Mbytes 页数:63 Pages

SAMSUNG

三星

K4B1G0846C-ZCF7

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

文件:1.25538 Mbytes 页数:63 Pages

SAMSUNG

三星

K4B1G0846C-ZCG9

1Gb C-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM C-die is organized as a 32Mbit x 4/16Mbit x 8/ 8Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-1333) for general applications.

文件:1.25538 Mbytes 页数:63 Pages

SAMSUNG

三星

K4B1G0846D

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

文件:1.2053 Mbytes 页数:60 Pages

SAMSUNG

三星

K4B1G0846D-HCF7

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

文件:1.2053 Mbytes 页数:60 Pages

SAMSUNG

三星

K4B1G0846D-HCF8

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

文件:1.2053 Mbytes 页数:60 Pages

SAMSUNG

三星

K4B1G0846D-HCH9

1Gb D-die DDR3 SDRAM Specification

The 1Gb DDR3 SDRAM D-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications.

文件:1.2053 Mbytes 页数:60 Pages

SAMSUNG

三星

K4B1G0846E

Consumer Memory

SDRAM Product Guide Memory Division November 2007

文件:542.54 Kbytes 页数:15 Pages

SAMSUNG

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K4B1G0846E

DDR3 SDRAM Memory

DDR3 SDRAM Specification DDR3 SDRAM Memory

文件:721.38 Kbytes 页数:23 Pages

SAMSUNG

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K4B1G0846F

DDR3 SDRAM Memory

DDR3 SDRAM Specification DDR3 SDRAM Memory

文件:721.38 Kbytes 页数:23 Pages

SAMSUNG

三星

详细参数

  • 型号:

    K4B1G0846

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    1Gb C-die DDR3 SDRAM Specification

供应商型号品牌批号封装库存备注价格
BGA
64
询价
SAMSUNG
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
询价
SAMSUNG
24+
BGA
20
询价
SAMSUNG
BGA
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
SAMSUNG/三星
2447
FBGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
SAMSUNG/三星
23+
BGA
89630
当天发货全新原装现货
询价
SAMSUNG/三星
08+PBF
BGA
428
原装现货
询价
SAMSUNG/三星
23+
FBGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
SEC
10+
BGA
7
询价
SAMSUNG
1923+
BGA
6000
只做原装特价
询价
更多K4B1G0846供应商 更新时间2026-2-9 13:01:00