丝印：K404；Package：MINISO8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：K405；Package：MINISO8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：K405；Package：miniSO-8；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

文件：276.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：K402；Package：SOT-25；LOW POWER SINGLE OPERATIONAL AMPLIFIER

Description The TS321 is intended for cost-sensitive applications where space saving is of great importance. This bipolar op-amp offers the benefits of a reduced component size (SOT23-5 package), with specifications that match (or are better than) industry standard devices (like the popular LM3

文件：59.58 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：K401；Package：SOT-25；LOW POWER SINGLE OPERATIONAL AMPLIFIER

Description The TS321 is intended for cost-sensitive applications where space saving is of great importance. This bipolar op-amp offers the benefits of a reduced component size (SOT23-5 package), with specifications that match (or are better than) industry standard devices (like the popular LM3

文件：59.58 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：K4065；Package：TO-263-2L；General-Purpose Switching Device Applications

文件：407.91 Kbytes 页数：7 Pages

SANYO

三洋

丝印：K40DDH3E；Package：PG-TO247-3-AI；High speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated package

文件：2.00837 Mbytes 页数：16 Pages

INFINEON

英飞凌

丝印：K40EDH5；Package：PG-HSIP247-3-2；High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode in fully isolated package

文件：1.52355 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：K40EES5；Package：PG-HSIP247-3-2；TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode in fully isolated package

文件：1.52795 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：K40MCH3；Package：PG-TO247-3-46；Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode

文件：2.10969 Mbytes 页数：16 Pages

INFINEON

英飞凌