K40 Sub-Family

文件：2.19129 Mbytes 页数：68 Pages

恩XP

Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

文件：1.74897 Mbytes 页数：63 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

K40 Sub-Family Data Sheet

文件：876.82 Kbytes 页数：60 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

文件：1.74897 Mbytes 页数：63 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

K40 Sub-Family

文件：1.87901 Mbytes 页数：72 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

K40 Sub-Family

文件：2.20659 Mbytes 页数：69 Pages

恩XP

IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件：516.59 Kbytes 页数：16 Pages

INFINEON

英飞凌

IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode

文件：598.14 Kbytes 页数：15 Pages

INFINEON

英飞凌

丝印：K4013；Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 1.35 Ω(typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 640 V) • Enhancement-model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：254.01 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：K40MCH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features • VCE = 1200 V • IC = 40 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C • Optimized for high efficiency in high sp

文件：1.40569 Mbytes 页数：17 Pages

INFINEON

英飞凌