LM358ST

Low Power Dual Operational Amplifiers

Description Thesecircuitsconsistoftwoindependent,highgain,internallyfrequency-compensatedop-ampswhicharedesignedspecificallytooperatefromasinglepowersupplyoverawiderangeofvoltages.Thelowpowersupplydrainisindependentofthemagnitudeofthepowersupplyvoltage.

LM358ST

SILICON MONNOLITHIC INTEGRATED CIRCUIT

Description TheUniversalStandardfamilyLM358/324,LM2904/2902monolithicICsintegratetwoindependentop-ampsandphasecompensationcapacitorsonasinglechip andfeaturehigh-gain,lowpowerconsumption,andanoperatingvoltagerangeof3[V]to32[V](singlepowersupply.) Features

LM358ST

Marking：K405；Package：MINISO8；Low-power dual operational amplifiers

Features Frequencycompensationimplementedinternally LargeDCvoltagegain:100dB Widebandwidth(unitygain):1.1MHz(temperaturecompensated) Verylowsupplycurrentperchannelessentiallyindependentofsupplyvoltage Lowinputbiascurrent:20nA(temperaturecompensated) Lowinput

LM358ST

Marking：K405；Package：miniSO-8；Low Power Dual Operational Amplifiers

■Internallyfrequencycompensated ■LargeDCvoltagegain:100dB ■Widebandwidth(unitygain):1.1mHz (temperaturecompensated) ■Verylowsupplycurrent/op(500μA)essentially independentofsupplyvoltage ■Lowinputbiascurrent:20nA (temperaturecompensated) ■Lowinputoffsetvolta

LM358ST

Low power dual operational amplifiers

LM358ST

SIGNATURE SERIES Operational Amplifiers

LM358ST

Low power dual operational amplifiers