THINKISEMI 9A,900V N-CHANNEL PLANAR STRIPE POWER MOSFETs

文件：1.06566 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

丝印：K3878；TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：235.79 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：K3878；Switching Regulator Applications

文件：212.41 Kbytes 页数：6 Pages

TOSHIBA

东芝

900V N-Channel Power MOSFET

MINOS

迈诺斯