丝印：K28；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.53183 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：K28；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BARRIERRECTIFIER

Features « Low power loss, high efficiency « High forward surge current capability + High Current Capability + For surface mounted applications + Meets MSL level 1, per J-STD-020, LF maximum peak of 260°C Applications. These Schottky barrier diodes are designed for high speed switching. ap

文件：942.77 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：K28；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

文件：409.22 Kbytes 页数：3 Pages

YFWDIODE

佑风微电子

丝印：K28；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

文件：2.35179 Mbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：K28；Surface Mount Schottky Rectifiers

文件：1.27753 Mbytes 页数：3 Pages

JUXING

广东钜兴电子

丝印：K28；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

文件：896.34 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：K28A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA)

文件：287.93 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K28E65W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA)

文件：302.02 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K28N65W；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA)

文件：241.42 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K28N65W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 115 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：244.27 Kbytes 页数：10 Pages

TOSHIBA

东芝