P20N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

PCFC20N60W

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

PSM20N60CT

20A600VSingleN-ChannelPowerMOSFET

PSM20N60CTB

20A600VSingleN-ChannelPowerMOSFET

PSM20N60CTF

20A600VSingleN-ChannelPowerMOSFET

PSM20N60PT

20A600VSingleN-ChannelPowerMOSFET

RLBGB20N60

IGBT

Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

RLFGB20N60CT

N-CHANNELIGBT

FEATURES Lowgatecharge TrenchFSTechnology, saturationvoltage:VCE(sat),typ=1.6V,IC=20AandTC=25°C APPLICATIONS Generalpurposeinverters UPS

RLGB20N60CT

IGBT

Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS,

RLPGB20N60CT

IGBT

Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UP