首页 >K20N60HS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Highspeedswitching | KECKEC CORPORATION KEC株式会社 | KEC | ||
Highspeedswitching | KECKEC CORPORATION KEC株式会社 | KEC | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovidesfastswitchingcharacteristicsandresultsinefficie | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovideslowon–voltagewhichresultsinefficientoperationat | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
InsulatedGateBipolarTransistorwithAnti-ParallelDiode ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
600VSiliconN-ChannelPowerMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Features •Ultrafastbodydiode •Ruggedpolysilicongatecellstructure •IncreasedUnclampedInductiveSwitching(UIS)capability •Hermeticallysealed,surfacemountpowerpackage •Lowpackageinductance •Verylowthermalresistance •Reversepolarityavailableuponrequest | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
500VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
SuperJunctionMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
SuperJunctionMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
