N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

The 2SK2070 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.\nThis product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters • New package intermediate between small-signal and power models\n• Low ON resistance\n   RDS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A\n   RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A;

Renesas

瑞萨

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Construction utilizes void-free molded plastic technique ♦ Low reverse leakage ♦ High forward surge current capability ♦

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CHENDA

辰达半导体

SCHOTTKY BARRIER RECTIFIER DIODES

Features ● The plastic package carries Underwriters Laboratory ● Flammability Classification 94V-0 ● Construction utilizes void-free ● molded plastic technique ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: ● 250 °C,0.25”(6.35mm) from

文件：252.44 Kbytes 页数：2 Pages

SUNMATE

森美特

SCHOTTKY BARRIER RECTIFIER

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CHENDA

辰达半导体