K2057

Field Effect Transistor Silicon N Channel MOS Type

FieldEffectTransistor SiliconNChannelMOSType(π-MOSIV) HighSpeed,HighCurrentSwitchingApplications Features ●LowDrain-SourceONResistance -RDS(ON)=0.24Ω(Typ.) ●HighForwardTransferAmittnace -|Yfs|=15S(Typ.) ●LowLeakageCurrent -IDSS=-100μA(Max.)(VDS

KIA2057

BIPOLARLINEARINTEGRATEDCIRCUIT(AM/FMIFMPXFORDIGITALTUNINGSYSTEM)

AM/FMIF+MPX(forDigitalTuningSystem)

KIA2057N

BIPOLARLINEARINTEGRATEDCIRCUIT(AM/FMIFMPXFORDIGITALTUNINGSYSTEM)

AM/FMIF+MPX(forDigitalTuningSystem)

KOM2057L

3fach-Silizium-Fotodiodenzeile3-ChipSiliconPhotodiodeArray

Features ●Especiallysuitableforapplicationsfrom400nmto1100nm ●Shortswitchingtime(typ.14ns) ●DILplasticpackage Applications ●Follow-upcontrols ●Edgedrives ●Positioning ●Industrialelectronics ●Forcontrolanddrivecircuits

LTC2057

BufferedOctal,16-Bit,200ksps/ChDifferential짹10.24VADCwith30VP-PCommonModeRange

LTC2057

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LTC2057

PrecisionInstrumentationAmplifierwithLevelShiftandOutputClamping

DESCRIPTION TheLT®6372-1isagainprogrammable,highprecisioninstrumentationamplifierthatdeliversindustryleadingDCprecision.Thishighprecisionenablessmallersignalstobesensedandeasescalibrationrequirements,particularlyovertemperature.TheLT6372-1incorporatesfeaturesin

LTC2057

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LTC2057

2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers

FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8

LTC2057

10μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifier

FEATURES APPLICATIONS nLowSupplyCurrent:10μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n5pATypical n50pAMaximum,–40°Cto85°C n150pAMaximum,–40°Cto125°C nIntegratedEMIFilter(90dBRejectionat1.8