丝印：K190E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

文件：467.5 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K190U60Z1；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.48 mA)

文件：519.02 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K190U65Z；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.149 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

文件：473.74 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K19A50W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)

文件：255.85 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K19A；Package：miniSO8；360 mW mono amplifier with standby mode

Features • Operating from VCC = 2 V to 5.5 V • Standby mode active high (TS419) or low (TS421) • Output power into 16 Ω: 367 mW @ 5 V with 10% THD+N max or 295 mW @ 5 V and 110 mW @ 3.3 V with 1% THD+N max. • Low current consumption: 2.5 mA max. • High signal-to-noise ratio: 95 dB (A

文件：1.72805 Mbytes 页数：42 Pages

STMICROELECTRONICS

意法半导体

中电压

Littelfuse

力特

中电压

Littelfuse

力特

包装：散装 类别：计算机设备 监控器，监视器 描述：MONITOR TRU 19\

TPK-AMERICA