丝印：K190E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

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TOSHIBA

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Power MOSFET (N-ch 500V

Application ScopeSwitching Voltage Regulators\nPolarityN-ch\nGenerationDTMOSⅥ\nInternal ConnectionSingle\nRoHS Compatible Product(s) (#)Available

Toshiba

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TO-220

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DPAK

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