N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS)

FM Tuner Applications VHF Band Amplifier Applications • High power gain: GPS = 24dB (typ.) (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)

文件：234.15 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator Application High speed power switching

文件：48.86 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

N-channel MOS-FET

Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof

文件：203.02 Kbytes 页数：2 Pages

FUJI

富士通

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：230.46 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

1.0 AMP SURFACE MOUNT SCHOT TKYBARRIER RECTIFIERS

FOSAN

富信半导体

包装：散装 类别：开关 配件 描述：ADJ JOINT KEY (PS21S \u0026 PS42S)

Carlo Gavazzi Inc.

包装：散装 类别：工具 螺丝和螺母起子 描述：SCREWDRIVER PHILLIPS - 9\

KLEIN

凯能

丝印：K190A60Z1；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.48 mA)

文件：507.7 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K190A65Z；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

文件：469.94 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K190E60Z1；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.48 mA)

文件：511.85 Kbytes 页数：9 Pages

TOSHIBA

东芝