| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FastIGBTinNPT-technology FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HighSpeedIGBTinNPT-technology HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature - | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HighSpeedIGBTinNPT-technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverters | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverters | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)RUFseriesprovideslowconductionandswitchinglossesaswellasshortcircuitruggedness.RUFseriesisdesignedfortheapplicationssuchasmotorcontrol,UPSandgeneralinverterswhereshort-circuitruggednessisrequir | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FastIGBTinNPT-technology FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ShortCircuitRatedIGBT GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)RUFseriesprovideslowconductionandswitchinglossesaswellasshortcircuitruggedness.RUFseriesisdesignedfortheapplicationssuchasmotorcontrol,UPSandgeneralinverterswhereshort-circuitruggednessisrequir | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FastIGBTinNPT-technology FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
20+ |
TO-263 |
15800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
INFINEON/英飞凌 |
TO-263 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
INFINEON |
23+ |
TO-263 |
8000 |
只做原装现货 |
询价 | ||
富士 |
6000 |
面议 |
19 |
TO-220 |
询价 | ||
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
VBSEMI |
19+ |
TO-252 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
23+ |
N/A |
82000 |
一级代理放心采购 |
询价 | |||
INFINEON英飞凌 |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
询价 | ||
INFINEON |
2016+ |
TO-3P |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
INFINEON |
24+ |
TO-3P |
5000 |
只做原装公司现货 |
询价 |
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