丝印：K06；Package：EMT6；1.8V Drive NchNch MOSFET

文件：108.6 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：K06；Package：EMT6；1.8V Drive NchNch MOSFET

文件：87.2 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：K065V65X2；Package：TO-247-3L；650V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, fast switching speeds with low RG • Optimized drive voltage (VGS =15V) for broad driver compatibility • Robust body diode and low Qrr Applications • Renewable • Industrial • EV Charger • UPS • Solar Inverters

文件：880.04 Kbytes 页数：9 Pages

AOSMD

万国半导体

丝印：K063N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA)

文件：620.31 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K063Z60Z1；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA)

文件：644.14 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K065N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.054 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA)

文件：414.12 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K065U65Z；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.051 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA)

文件：492.89 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K065Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.054 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA)

文件：413.84 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K068N65Z5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.052 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.6

文件：499.2 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K068U65Z5；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.052 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.6

文件：510.66 Kbytes 页数：10 Pages

TOSHIBA

东芝