首页 >JX2N3055CRC>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SILICONNPNTRANSISTORS | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
ComplementarySiliconPowerTransistors 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,115WATTS Complementarysiliconpowertransistorsaredesignedforgeneral−purposeswitchingandamplifierapplications. Features •DCCurrentGain−hFE=20−70@IC=4Adc •Collector−EmitterSaturationVoltage−VCE(sat | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
BipolarNPNDeviceinaHermeticallysealedTO3MetalPackage BipolarNPNDevice. VCEO=100V IC=15A | SEME-LAB Seme LAB | SEME-LAB | ||
SILICONPLANARPOWERTRANSISTORS | TEL TRANSYS Electronics Limited | TEL | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·ComplementtotypeMJ2955 ·DCCurrentGain-hFE=20–70@IC=4Adc ·Collector–EmitterSaturationVoltage-VCE(sat)=1.1Vdc(Max)@IC=4Adc ·ExcellentSafeOperatingArea APPLICATIONS ·Designedforgeneral–purposeswitching andamplif | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | JMNIC | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·ComplementtotypeMJ2955 ·DCCurrentGain-hFE=20–70@IC=4Adc ·Collector–EmitterSaturationVoltage-VCE(sat)=1.1Vdc(Max)@IC=4Adc ·ExcellentSafeOperatingArea APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifier | SAVANTIC Savantic, Inc. | SAVANTIC | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforpowerswitchingcircuits,seriesandshuntregulators,outputstagesandhighfidelityamplifiers. | DCCOM Dc Components | DCCOM | ||
Complementarypowertransistors | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
TO-3PowerPackageTransistors(NPN) TO-3PowerPackageTransistors(NPN) | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
ComplementarySiliconPowerTransistors 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,115WATTS Complementarysiliconpowertransistorsaredesignedforgeneral−purposeswitchingandamplifierapplications. Features •DCCurrentGain−hFE=20−70@IC=4Adc •Collector−EmitterSaturationVoltage−VCE(sat | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS COMPLEMENTARYSILICONPOWERTRANSISTORS 15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS115WATTS | bocaBoca semiconductor corporation 博卡博卡半导体公司 | boca | ||
15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60,120VOLTS115,180WATTS 15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60,120VOLTS115,180WATTS ...PowerBasecomplementarytransistorsdesignedforhighpoweraudio,steppingmotorandotherlinearapplications.Thesedevicescanalsobeusedinpowerswitchingcircuitssuchasrelayorsolenoiddrivers,d | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS115WATTS 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS115WATTS 2N3055(NPN)MJ2955(PNP) designedforgeneral–purposeswitchingandamplifierapplications. 1.DCCurrentGain—hFE=20–70@IC=4Adc 2.Collector–EmitterSaturationVoltage—VCE(sat)=1.1Vdc(Max)@IC=4Adc | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
POWERTRANSISTORS(15A,50V,115W) | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS Description Thedevicesaremanufacturedinepitaxial-baseplanartechnologyandaresuitableforaudio,powerlinearandswitchingapplications. Features ■Lowcollector-emittersaturationvoltage ■ComplementaryNPN-PNPtransistors Applications ■Generalpurpose ■Audi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
NPNTRANSISTORFORPOWERFULAFOUTPUTSTAGES NPNTransistorforPowerfulAFOutputStage 2N3055isasinglediffusedNPNsilicontransistorinTO3case(3A2DIN41872).Thecollectoriselectricallyconnectedtothecase.ThetransistorisparticularlysuitableforuseinpowerfulAFoutputstagesandinstabilizedpowersupplyunits. | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
NPNSILICONPHOTOTRANSISTOR NPNSILICONPOWERTRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SILICONPLANARPOWERTRANSISTORS GeneralPurposeSwitchingandAmplifierApplications 2N3055NPN MJ2955PNP | CDIL Continental Device India Limited | CDIL | ||
SiliconNPNPowerTransistor DESCRIPTION ·ExcellentSafeOperatingArea ·DCCurrentGain-hFE=20-70@IC=4A ·Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A ·ComplementtoTypeMJ2955 APPLICATIONS ·Designedforgeneral-purposeswitchingandamplifierapplications | TGS Tiger Electronic Co.,Ltd | TGS | ||
NPNSILICONDARLINGTONS | COMSET Comset Semiconductor | COMSET |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOT/ST |
02+ |
TO-3 |
1324 |
询价 | |||
MOTOROLA |
16+ |
CAN3 |
2600 |
原装现货假一罚十 |
询价 | ||
MOTOROLA |
专业铁帽 |
CAN3 |
2600 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
询价 | ||
JX2N3057A |
90 |
90 |
询价 |
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