MOS管低压

JRX

君瑞迅

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Low on-state resistance ■ Avalanche ruggedness rated ■ Logic level compatible ■ Surface mount package. Applications ■ DC to DC converters ■

文件：331.22 Kbytes 页数：13 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) =5.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.48 Kbytes 页数：2 Pages

ISC

无锡固电

Switching (30V, 10A)

Features 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electric Structure Silicon N-channel MOS FET

文件：44.16 Kbytes 页数：4 Pages

ROHM

罗姆