MTP30N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP30N06VL

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.050OHM

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MTP30N06VL

N?묬hannelPowerMOSFET

MTP30N06VL

N-Channel60V(D-S)MOSFET

NP30N06QDK

60V??30A??DualN-channelPowerMOSFET

NTB30N06

PowerMOSFET30Amps,60Volts

NTB30N06G

N-Channel60V(D-S)MOSFET

NTB30N06G

PowerMOSFET30Amps,60Volts

NTB30N06L

PowerMOSFET30Amps,60Volts,LogicLevel

PowerMOSFET30Amps,60Volts,LogicLevel,N−ChannelTO−220andD2PAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable TypicalApplications •PowerSupplies •Co

NTB30N06L

PowerMOSFET