N-CHANNEL MOSFET

APPLICATIONS 1. High efficiency switch mode power supplies 2. Electronic lamp ballasts based on half bridge 3. UPS FEATURES 1. Low gate charge 2. Low Crss (typical 21pF ) 3. Fast switching 4. 100 avalanche tested 5. Improved dv/dt capability 6. RoHS product

文件：1.65891 Mbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

N-CHANNEL MOSFET

APPLICATIONS 1. High efficiency switch mode power supplies 2. Electronic lamp ballasts based on half bridge 3. UPS FEATURES 1. Low gate charge 2. Low Crss (typical 21pF ) 3. Fast switching 4. 100 avalanche tested 5. Improved dv/dt capability 6. RoHS product

文件：1.65891 Mbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

N-CHANNEL MOSFET / TO-220MF Package

APPLICATIONS\n1. High efficiency switch mode power supplies\n2. Electronic lamp ballasts based on half bridge\n3. UPS\n\nFEATURES\n1. Low gate charge\n2. Low  Crss (typical 21pF ) \n3. Fast switching\n4. 100% avalanche tested \n5. Improved dv/dt capability\n6. RoHS  product 1. Low gate charge\n2. Low  Crss (typical 21pF ) \n3. Fast switching\n4. 100% avalanche tested \n5. Improved dv/dt capability\n6. RoHS  product;

JSMC

华微电子

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件：122.09 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件：118.14 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both

文件：144.18 Kbytes 页数：6 Pages

ONSEMI

安森美半导体