首页 >JCS15N60FH-R-F-N-B>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
JCS15N60FH-R-F-N-B | N-CHANNEL MOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | JSMC | |
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | JSMC | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Highspeedswitching | KECKEC CORPORATION KEC株式会社 | KEC | ||
SEMICONDUCTOR | KECKEC CORPORATION KEC株式会社 | KEC | ||
ThisSuperJunctionMOSFEThasbettercharacteristics | KECKEC CORPORATION KEC株式会社 | KEC | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET600V,15A,0.40(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovideslowon–voltagewhichresultsinefficientoperationat | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovidesfastswitchingcharacteristicsandresultsinefficien | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Sino-Micro |
2020+ |
TO-220F |
49860 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
S |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
SINO-MICRO |
2022+ |
TO-220F |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
S |
23+ |
TO-220F |
6000 |
原装正品，支持实单 |
询价 | ||
SINO-MICRO |
2022+ |
TO-220F |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
apec |
2023+ |
TO-220F |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
华微 |
23+ |
TO-220F |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
华微 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
华微 |
2022 |
TO-220F |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
HUAWEI |
21+ |
TO-220F |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 |
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