JCS20N20CT-O-C-N-B规格书贸易商杜因特-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
JCS20N20CT-O-C-N-B	文件：1.81703 Mbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology 文件：1.81703 Mbytes 页数：5 Pages	DOINGTER 杜因特	DOINGTER
JCS20N20FT-O-F-N-B	文件：1.01266 Mbytes Page：5 Pages	N-Channel MOSFET uses advanced trench technology 文件：1.01266 Mbytes 页数：5 Pages	DOINGTER 杜因特	DOINGTER
MTB20N20E	文件：258.709 Kbytes Page：10 Pages	TMOS POWER FET 20 AMPERES 200 VOLTS The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E–FET is designed to withstand high 文件：258.709 Kbytes 页数：10 Pages	Motorola 摩托罗拉	Motorola
MTB20N20E	文件：332.29 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c 文件：332.29 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多JCS20N20CT-O-C-N-B供应商更新时间2025-10-5 14:02:00