JANTXV2N3749数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This 2N3749 silicon NPN transistor is rated at 5 amps and is military qualified up to the JANS level for high-reliability applications. This transistor is available in a TO-111 isolated package which features a 180 degree lead orientation.

特性 Features

JEDEC registered 2N3749
Low saturation voltage
Low leakage current
Fast switching capable - 0.5 µs rise time
High frequency response
TO-111 case with isolated terminals
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/315
RoHS compliant versions available (commercial grade only)
Class 3B to ESD per MIL-STD-750 Method 1020
High frequency inverters
Converters
Linear amplifiers
High speed switching regulated power supplies
RF power supplies.

简介

JANTXV2N3749属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的JANTXV2N3749晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。