POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE (TO-205AF) The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-stat

文件：226.49 Kbytes 页数：6 Pages

IRF

Repetitive Avalanche Ratings

文件：194.96 Kbytes 页数：7 Pages

IRF

HiRel MOSFETs

\n优势:;

Infineon

英飞凌

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS SURFACE MOUNT (LCC-18) The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers

文件：136.14 Kbytes 页数：7 Pages

IRF

Repetitive Avalanche Ratings

文件：194.96 Kbytes 页数：7 Pages

IRF

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

Infineon

英飞凌