Darlington PNP Silicon Power -80V to -100V, -20A

This specification covers the performance requirements for PNP, Darlington, power, 2N6286 and 2N6287 transistors for use in particular power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/ The device package outlines are as follows: similar to TO-3 for all encapsulated device types.;

Microchip

微芯科技

PNP DARLINGTON POWER SILICON TRANSISTOR

文件：58.99 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Package：TO-204AA，TO-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 80V 20A TO204AA

MICROCHIP

微芯科技

PNP DARLINGTON POWER SILICON TRANSISTOR

文件：58.36 Kbytes 页数：2 Pages

MICROSEMI

美高森美

DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS

文件：218.76 Kbytes 页数：4 Pages

BOCA

博卡

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284 hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287 • Collector–Emitter Sustai

文件：214.32 Kbytes 页数：6 Pages

ONSEMI

安森美半导体