JANSR2N7389规格书应用电路贸易商英飞凌IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
JANSR2N7389	文件：128.74 Kbytes Page：8 Pages	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effec 文件：128.74 Kbytes 页数：8 Pages	IRF	IRF
JANSR2N7389	文件：300 bytes Page：1 Pages	Rad hard MOSFETs \n优势:;	Infineon 英飞凌	Infineon
JANSR2N7389U	文件：300 bytes Page：1 Pages	P-channel rad hard power MOSFETs \n优势:;	Infineon 英飞凌	Infineon
JANSF2N7389	文件：128.74 Kbytes Page：8 Pages	TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effec 文件：128.74 Kbytes 页数：8 Pages	IRF	IRF

更多JANSR2N7389供应商更新时间2026-1-31 15:38:00