Si Schottky Rectifier Diodes

\"This 1N5711UB and 1N5712UB Schottky barrier diode is ceramic encased and offers military grade qualifications for high-reliability applications.  Unidirectional as well as doubler, common anode and common cathode polarities are available.\"

Microchip

微芯科技

Package：4-SMD，无引线；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SCHOTTKY DIODE

MICROCHIP

微芯科技

Package：3-SMD，无引线；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SMALL-SIGNAL SCHOTTKY

MICROCHIP

微芯科技

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ◇ Metal-to-silicon junction ◇ High breakdown voltage ◇ Low turn-on voltage ◇ Ultrafast switching speed ◇ Prmarly intended for high level UHF/VHF detection and pulse applications with broad dynamic range

文件：54.13 Kbytes 页数：3 Pages

BILIN

银河微电

Schottky Barrier Diodes for General Purpose Applications

Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv

文件：56.87 Kbytes 页数：6 Pages

HP

安捷伦

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction • High breakdown voltage • Low turn-on voltage • Ultrafast switching speed • Primarily intended for high level UHF/VHF detectionand pulse applications with broad dynamic range • The diode is also available in the MiniMELF case with type designation LL5

文件：58.49 Kbytes 页数：3 Pages

JINANJINGHENG

晶恒集团