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JANS1N5822US

包装:散装 封装/外壳:SQ-MELF 类别:分立半导体产品 二极管 - 整流器 - 单 描述:SCHOTTKY SM DIODE 40V 3A, /620 J

SEMTECH

Semtech Corporation

SEMTECH

JANS1N5822US

包装:管件 封装/外壳:SQ-MELF,B 类别:分立半导体产品 二极管 - 整流器 - 单 描述:SCHOTTKY DIODE

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip

JANS1N5822US/TR

包装:散装 封装/外壳:SQ-MELF,B 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE SMALL-SIGNAL SCHOTTKY

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip

1N5822

3AMPERESCHOTTKYBARRIERRECTIFIER(VOLTAGE-20to40VoltsCURRENT-3.0Amperes)

VOLTAGE20to40VoltsCURRENT3.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,f

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

1N5822

3AMPERESCHOTTKYBARRIERRECTIFIERSVOLTAGE-20to40VoltsCURRENT-3.0Ampere???

VOLTAGE-20to40VoltsCURRENT-3.0Ampere s

Surge

SURGE COMPONENTS

Surge

1N5822

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow–voltage,

MotorolaMotorola, Inc

摩托罗拉

Motorola

1N5822

3AMPERESCHOTTKYBARRIERRECTIFIER

TRSYS

Transys Electronics

TRSYS

1N5822

3.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

WTE

1N5822

SCHOTTKYBARRIERRECTIFIER

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON

1N5822

3.0AMP.SCHOTTKYBARRIERRECTIFIERS

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD

1N5822

SCHOTTKYBARRIERRECTIFIER

VOLTAGE:20TO40VCURRENT:3.0A FEATURES •Epitaxialconstructionforchip •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed: 250°C/10sec/0.375(9.5mm)leadlength at5lbstension

SSEShanghai Sunrise Electronics

Shanghai Sunrise Electronics

SSE

1N5822

3.0AmpereSchottkyBarrierRectifiers

Features •3.0ampereoperationatTA=95°C withnothermalrunaway. •Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

1N5822

3AMPSCHOTTKYBARRIERRECTIFIERS

•1N5822AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/620 •3AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE

1N5822

SCHOTTKYBARRIERRECTIFIER

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsliiconjunction,majoritycarrietconduction •Guardringforovercoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •Highsurgecapability

CHENYIShanghai Lunsure Electronic Tech

商朗电子上海商朗电子科技有限公司

CHENYI

1N5822

3.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40Volts CURRENT3.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

BYTES

1N5822

TECHNICALSPECIFICATIONSOFSCHOTTKYBARRIERRECTIFIER

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

1N5822

3.0AMPSCHOTTKYBARRIERRECTIFIERS

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA

1N5822

SCHOTTKYBARRIERRECTIFIERDIODES

PRV:20-40Volts IO:3.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC

EIC

1N5822

3.0ASCHOTTKYBARRIERRECTIFIERS

FeaturesandBenefits •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtectionApplicat

DIODESDiodes Incorporated

达尔科技

DIODES

1N5822

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-3.0Amperes FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Metalsiliconjunction,majoritycarrierconduction ♦Lowpowerloss,highefficiency ♦Highcurrentcapability,lowforwardvoltagedrop

GE

GE Industrial Company

GE

产品属性

  • 产品编号:

    JANS1N5822US

  • 制造商:

    Semtech Corporation

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 系列:

    MIL-PRF-19500/620

  • 包装:

    散装

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io):

    3A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    SQ-MELF

  • 工作温度 - 结:

    -65°C ~ 125°C

  • 描述:

    SCHOTTKY SM DIODE 40V 3A, /620 J

供应商型号品牌批号封装库存备注价格
MICROCHIP
21+
N/A
9800
只做原装正品假一赔十!正规渠道订货!
询价
MICROSEMI/美高森美
22++
D-5B
4280
原装正品优势渠道!实单特价!
询价
Microsemi
2018+
SMD
103
“芯达集团”专营军工百分之百原装进口
询价
MSC
三年内
1983
纳立只做原装正品13590203865
询价
MICROSEMI/美高森美
23+
D-5B
90000
只做原厂渠道价格优势可提供技术支持
询价
MICROSEMI/美高森美
21+
SMD
6688
十年老店,原装正品
询价
MICROSEMI
23+
N/A
3600
全新进口原装正品现货,假一罚十价格合理
询价
MICROSEMI/美高森美
23+
D-5B
9920
原装正品,支持实单
询价
MICROCHIP
22+
N/A
10000
公司只有原装
询价
MICROCHIP
2025
N/A
307
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多JANS1N5822US供应商 更新时间2024-4-20 10:11:00