Transistor GP BJT NPN 3-Pin 80V 3A 1000mW TO-5 Bag

This family of 2N3418 through 2N3421 high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-relliability applications. These transistors are available in a standard TO-205AA (TO-5) package as well as a TO-205AD (TO-39 JEDEC registered 2N3418 through 2N3421 series\nJANHC, JANKC, JAN,JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/393\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.25 V @ Ic = 1 A\nRise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA\nFall time tf = ;

Microchip

微芯科技

NPN MEDIUM POWER SILICON TRANSISTOR

文件：342 Kbytes 页数：6 Pages

MICROSEMI

美高森美

Package：TO-205AA，TO-5-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 3A TO5

MICROCHIP

微芯科技

Transistor GP BJT NPN 3-Pin 80V, 3A, 1000mW TO-5 Bag

This family of 2N3418 through 2N3421 high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-relliability applications. These transistors are available in a standard TO-205AA (TO-5) package as well as a TO-205AD (TO-39 JEDEC registered 2N3418 through 2N3421 series\nJANHC, JANKC, JAN,JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/393\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.25 V @ Ic = 1 A\nRise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA\nFall time tf = ;

Microchip

微芯科技

Transistor GP BJT NPN 3-Pin 80V, 3A, 1000mW TO-5 Bag

This family of 2N3418 through 2N3421 high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-relliability applications. These transistors are available in a standard TO-205AA (TO-5) package as well as a TO-205AD (TO-39 JEDEC registered 2N3418 through 2N3421 series\nJANHC, JANKC, JAN,JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/393\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.25 V @ Ic = 1 A\nRise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA\nFall time tf = ;

Microchip

微芯科技

Package：TO-205AD，TO-39-3 金属罐；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 3A TO39

MICROCHIP

微芯科技

Package：3-SMD，无引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 3A U4

MICROCHIP

微芯科技