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JAN1N6629US中文资料Rectifier Diode Switching 2-Pin 800V, 1.4A E-MELF Bag数据手册Microchip规格书

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厂商型号

JAN1N6629US

参数属性

JAN1N6629US 封装/外壳为E-MELF;包装为卷带(TR);类别为分立半导体产品的二极管-整流器-单;产品描述:DIODE GEN PURP 880V 1.4A D5B

功能描述

Rectifier Diode Switching 2-Pin 800V, 1.4A E-MELF Bag

封装外壳

E-MELF

制造商

Microchip Microchip Technology

中文名称

微芯科技 美国微芯科技公司

数据手册

下载地址下载地址二

更新时间

2025-9-24 10:19:00

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JAN1N6629US规格书详情

描述 Description

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded packages for thrUS-hole mounting (see separate data sheet for 1N6626 thru 1N6631). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

特性 Features

Surface mount series equivalent to the JEDEC registered 1N6626 to 1N6631 series
Void less hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF19500/590
Further options for screening in accordance with MILPRF-19500 for JANS by using a “SP” prefix, e
g
SP6626US, SP6629US, etc
Axial-leaded equivalents also available (see separate data sheet for 1N6626 thru 1N6631)
Ultrafast recovery rectifier series 200 to 1000V
Military and other high-reliability applications
Switching power supplies or other applications requiring extremely fast switching & low forward loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power capability
Inherently radiation hard as described in Microchip MicroNote 050

技术参数

  • 产品编号:

    JAN1N6629US

  • 制造商:

    Microsemi Corporation

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 系列:

    Military, MIL-PRF-19500/590

  • 包装:

    卷带(TR)

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io):

    1.4A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 不同 Vr、F 时电容:

    40pF @ 10V,1MHz

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    E-MELF

  • 供应商器件封装:

    D-5B

  • 工作温度 - 结:

    -65°C ~ 150°C

  • 描述:

    DIODE GEN PURP 880V 1.4A D5B

供应商 型号 品牌 批号 封装 库存 备注 价格
Microsemi
1941+
N/A
909
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Microsemi
22+
NA
909
加我QQ或微信咨询更多详细信息,
询价
Microsemi/美高森美
专业军工
NA
1000
只做原装正品军工级部分订货
询价
MICROSEMI
三年内
1983
只做原装正品
询价
MICROSEMI
638
原装正品
询价
Microsemi
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
MICROSEMI
24+
SMD
63
“芯达集团”专营军工百分之百原装进口
询价
Microsemi Corporation
25+
D-5B
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
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Microchip
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
MICROSEMI
1809+
D-5B
326
就找我吧!--邀您体验愉快问购元件!
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