丝印：J330；Package：SOT23-5；20V,500mA, 5uA, Higt PSRR Voltage Reaulator

Features 5.0pA Ground Current at no Load +2 Output Accuracy 500mA Output Current :Bfi{i/e Operating Input Voltage Range: 2V to Dropout Voltage: 0.35V at 100mA (Vour=5V) Support Fixed Output Voltage 1.8V, 2.5V, 3.0V, 3.3V, 5.0V Stable with Ceramic or Tantalum Capacitor Current Limit Protect

文件：2.75925 Mbytes 页数：8 Pages

TECHPUBLIC

台舟电子

丝印：J330；Package：SOT23-5；20V,500mA, 5uA, Higt PSRR Voltage Reaulator

Features 5.0pA Ground Current at no Load +2 Output Accuracy 500mA Output Current :Bfi{i/e Operating Input Voltage Range: 2V to Dropout Voltage: 0.35V at 100mA (Vour=5V) Support Fixed Output Voltage 1.8V, 2.5V, 3.0V, 3.3V, 5.0V Stable with Ceramic or Tantalum Capacitor Current Limit Protect

文件：2.75543 Mbytes 页数：8 Pages

TECHPUBLIC

台舟电子

Silicon P-channel MOS FET

Silicon P-channel MOS FET For switching circuits Overview FJ330301 is P-channel small signal MOS FET employed small size surface mounting package. Features ● Low drain-source ON resistance: RDS(on) typ. = 4 Ω (VGS = -4.0 V) ● High-speed switching ● Small size surface mounting package: SSSMi

文件：579.12 Kbytes 页数：5 Pages

PANASONIC

松下

Optimized for maximum ratio combining

文件：575.26 Kbytes 页数：2 Pages

LSTD

莱尔德

Optimized for maximum ratio combining

文件：811.1 Kbytes 页数：2 Pages

LSTD

莱尔德

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：244.69 Kbytes 页数：4 Pages

GTM

勤益投资控股

丝印：J3307D；Package：D-PAK；High-Voltage Fast-Switching NPN Power Transistor

Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch-Mode Power Supplies

文件：374.98 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

包装：散装 类别：RF/IF，射频/中频和 RFID RF 天线 描述：RF ANT 3.5GHZ SECTOR N FEM BRKT

TE Connectivity Laird

包装：散装 类别：RF/IF，射频/中频和 RFID RF 天线 描述：RF ANT 3.5GHZ SECTOR N FEM BRKT

TE Connectivity Laird

包装：散装 类别：RF/IF，射频/中频和 RFID RF 天线 描述：RF ANT 3.5GHZ SECTOR N FEM BRKT

TE Connectivity Laird