首页 >IXTH26N50功率三极管>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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26A,500VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC26N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
HiPerFETMOSFETsISOPLUS220 ElectricallyIsolatedBackSurface N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS™Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.26Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHVHiPerFETPowerMOSFETISOPLUS220 N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( Applications DC-DCconverters | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AvalancheRatedFastInstrinsicDiode VDSS=500V ID25=26A RDS(on)≤230mΩ trr≤200ns AvalancheRatedFastInstrinsicDiode Features ●Internationalstandardpackages ●Fastintrinsicdiode ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomou | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Internationalstandardpackages LowRDS(on) UnclampedInductiveSwitching(UIS)rated Fastswitching MoldingepoxiesmeetUL94V-0flammabilityclassification | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andlaserdrives. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=200mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS™Family Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS™Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( | IXYS IXYS Corporation | IXYS |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
TO-3P |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
IXYS |
17+ |
TO-3P |
6200 |
询价 | |||
IXYS |
08+(pbfree) |
TO-247 |
8866 |
询价 | |||
IXYS |
23+ |
TO-3P |
5000 |
专做原装正品,假一罚百! |
询价 | ||
IXYS/艾赛斯 |
2022+ |
30 |
全新原装 货期两周 |
询价 | |||
IXYS |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
I |
23+ |
TO-247 |
10000 |
公司只做原装正品 |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 |
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