N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤185mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.35 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFAST IGBT

HiPerFAST™ IGBT with Diode Combi Pack Features l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l M

文件：45.54 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFASTTM IGBT ISOPLUS247TM (Electrically Isolated Back Surface)

文件：56.25 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFAST IGBT

Features • International standard package JEDEC TO-247 AD • High frequency IGBT with guaranteed Short Circuit SOA capability • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications •

文件：35.54 Kbytes 页数：2 Pages

IXYS

艾赛斯