SPD03N60C3

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

SPD03N60C3

CoolMOSPowerTransistor

SPD03N60C3

CoolMOSPowerTransistor

CoolMOS™PowerTransistor Features •Newrevolutioanaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplaing;RoHScompliant •QualifiedaccordingtoJEDECfortar

SPN03N60C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Extremedv/dtrated •Ultraloweffectivecapacitances •QualifiedaccordingtoJEDEC0)fortargetapplications

SPN03N60C3

CoolMOSPowerTransistorFeature

SPP03N60C3

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

SPP03N60C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultralowcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform

SPP03N60C3

COOLMOSPOWERTRANSISTOR

SPP03N60C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated

SPP03N60C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)