Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：308.23 Kbytes 页数：14 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

文件：338.99 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10962 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

COOL MOS POWER TRANSISTOR

文件：1.99914 Mbytes 页数：14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：599.57 Kbytes 页数：14 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7\n 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

COOL MOS POWER TRANSISTOR

文件：1.99914 Mbytes 页数：14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：599.57 Kbytes 页数：14 Pages

Infineon

英飞凌