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IRFR9014	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014PBF	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014PBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014PBF	文件：1.84209 Mbytes Page：10 Pages	HEXFET짰PowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR9014PBF	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TR	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRL	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRL	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR9014TRLA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRLPBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRLPBFA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRLPBFA	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRPBF	文件：1.02813 Mbytes Page：8 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
IRFR9014TRPBF	文件：2.62994 Mbytes Page：5 Pages	P-ChannelEnhancementModeMOSFETl Features *Vos=60V=-13A Rosion100mQ@Ves=10V Rosion110mQ@Vos=-4.5V(TYP)	TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司	TECHPUBLIC
IRFR9014TRPBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRPBFA	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRPBFA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRR	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9014	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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产品属性

产品编号：
ISL9014AIRBLZ-T
制造商：
Renesas Electronics America Inc
类别：
集成电路（IC） > 线性 + 开关稳压器
包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
输出配置：
正
输出类型：
固定
电压 - 输入（最大值）：
6.5V
电压 - 输出（最小值/固定）：
1.5V，2.9V
电压降（最大值）：
-，0.325V @ 300mA
电流 - 输出：
300mA，300mA
控制特性：
使能
保护功能：
过流，超温，软启动，欠压锁定（UVLO）
工作温度：
-40°C ~ 85°C
安装类型：
表面贴装型
封装/外壳：
10-VFDFN 裸露焊盘
供应商器件封装：
10-DFN（3x3）
描述：
IC REG LINEAR 1.5V/2.9V 10DFN

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市兴灿科技有限公司	ISL9014AIRBLZ-T	Intersil	23+	10-DFN	7444	原装现货	询价
深圳市科雨电子有限公司	ISL9014AIRBLZ-T	INTERSIL	20+	DFN-10	1001	就找我吧!--邀您体验愉快问购元件!	询价
深圳市佳斯泰科技有限公司	ISL9014AIRBLZ-T	Renesas	22+	10-VFDFN	9000	原厂渠道,现货配单	询价
深圳市宏捷佳电子科技有限公司	ISL9014AIRBLZ-T	Renesas Electronics America In	24+	10-VFDFN 裸露焊盘	9350	独立分销商,公司只做原装，诚心经营,免费试样正品保证	询价
深圳市瑞祥辉半导体有限公司	ISL9014AIRBLZ-T	Intersil	2318+	VFDFN-10	6890	长期供货进口原装热卖现货	询价
深圳市艾宇欣科技有限公司	ISL9014AIRCCZ	Intersil	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市恒意法电子有限公司	ISL9014AIRCCZ	Renesas Electronics America In	21+	10-VFDFN 裸露焊盘	18000	正规渠道/品质保证/原装正品现货	询价
深圳市河锋鑫科技有限公司	ISL9014AIRCCZ	Intersil	22+	10DFN	9000	原厂渠道,现货配单	询价
易创佳业科技（深圳）有限公司	ISL9014AIRCCZ	Intersil	23+	10DFN	9000	原装正品，支持实单	询价
深圳市惊羽科技有限公司	ISL9014AIRCCZ	RENESAS-瑞萨.	24+25+/26+27+	DFN-10	9328	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价

更多ISL9014AIRBLZ-T供应商更新时间2024-5-31 9:26:00

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