Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

文件：477.15 Kbytes 页数：15 Pages

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丝印：ISL73033SLHMKZ；Package：BGA；Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

文件：477.15 Kbytes 页数：15 Pages

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Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

文件：477.15 Kbytes 页数：15 Pages

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Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

文件：477.15 Kbytes 页数：15 Pages

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Radiation Hardened 100V GaN FET with Integrated Low-Side GaN FET Driver

The ISL73033SLHM is a radiation hardened 100V GaN FET with integrated Low-Side GaN FET driver. The GaN FET are capable of providing up to 45A output and have a RDSON as low as 7.5mΩ. The integrated Low-Side GaN FET driver has a supply range from 4.5V to 13.2V and can accept logic levels up to 14.7V, • Production testing and qualification follow AS6294/1\n• Wide driver bias range of 4.5V to 13.2V\n• Inverting and non-inverting inputs\n• Integrated driver optimized for enhancement-mode GaN FETs• Internal 4.5V regulated gate drive voltage\n• Full military temperature range operation• TA = -55°C to;

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