包装：散装 功能：电压基准 类别：开发板，套件，编程器 评估和演示板及套件 描述：EVAL BOARD FOR ISL21060

Renesas Electronics America Inc

RF Power Field Effect Transistors

2110- 2170 MHz, 60 W, 28 V LATERAL N- CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W- CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical 2- Carrier W- CDMA Performance: VDD= 28

文件：380.01 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

2170 MHz, 60 W, 28 V LATERAL N–CHANNEL RF POWER MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA,CDMA, TDMA, GSM and multicarrier amplifier applications. • Typical W–CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offs

文件：550.96 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

1-CH H.Q. Speech Controller

INTRODUCTION SNC21060 is a one-channel voice synthesizer IC with Push-Pull direct drive circuit. It built in a 4-bit tiny controller with three 4-bit I/O ports. By programming through the tiny controller in SNC21060, user’s varied applications including voice section combination, key trigger arra

文件：116.46 Kbytes 页数：10 Pages

SONIX

松翰科技