N-Channel MOSFET

DESCRIPTION ·Drain Current -ID= 56A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 145mΩ(Max)@VGS= 10V APPLICATIONS ·DC-DC converter ·Battery Chargers ·High speed power switch

文件：594.5 Kbytes 页数：3 Pages

ISC

无锡固电

In-System Programmable High Density PLD

文件：185.09 Kbytes 页数：12 Pages

LATTICE

莱迪思

DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

Summary BVCEO > 17.5V IC(cont) = 5A VCE(sat) Description Advanced process capability has been used to achieve this high performance device. Combining two NPN transistors in the SM-8 package provides a compact solution for the intended applications. Features • Dual NPN device

文件：57.03 Kbytes 页数：3 Pages

ZETEX

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight Convertors * Emergency Lighting * DC-DC Convertors

文件：105.55 Kbytes 页数：4 Pages

ZETEX