ISD1100-SERIES

Single-Chip Voice Record/Playback Device 10- and 12-Second Durations Data Sheet Body;

ISF1100

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=10V APPLICATIONS ·Switching ·LLCconverters,resonantconverters

ITC1100

1000WATT,50V,PulsedAvionics1030MHz

[GHz-Technology] GENERALDESCRIPTION TheITC1100isacommonbasebipolartransistor.Itisdesignedforpulsedinterrogatorsystemsinthefrequencybandof1030MHz.Thedevicehasgoldthin-filmmetallizationforprovenhighMTTF.Thetransistorincludesinputreturnsforimprovedoutputrise

ITC1100

Commonbasebipolartransistor1000WATT,50V,Pulsed

GENERALDESCRIPTION TheITC1100isacommonbasebipolartransistor.Itisdesignedforpulsedinterrogatorsystemsinthefrequencybandof1030MHz.Thedevicehasgoldthin-filmmetallizationforprovenhighMTTF.Thetransistorincludesinputreturnsforimprovedoutputrisetime.Lowtherma

ISD1110P

ISD |
DIP28 |

ISD |