N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 13A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= 10V APPLICATIONS · Switching · LLC converters, resonant converters

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ISC

无锡固电

1000 WATT, 50V, Pulsed Avionics 1030 MHz

[GHz-Technology] GENERAL DESCRIPTION The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold thin-film metallization for proven high MTTF. The transistor includes input returns for improved output rise

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ETCList of Unclassifed Manufacturers

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Common base bipolar transistor 1000 WATT, 50V, Pulsed

GENERAL DESCRIPTION The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold thin-film metallization for proven high MTTF. The transistor includes input returns for improved output rise time . Low therma

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GHZTECH

Intel짰 IXP42X Product Line of Network Processors and IXC1100 Control Plane Processor

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INTEL

英特尔