32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

文件：105.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

文件：105.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

文件：105.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

文件：105.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum. When

文件：105.43 Kbytes 页数：14 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

文件：321.19 Kbytes 页数：13 Pages

ISSI

矽成半导体

32K x 8 LOW VOLTAGE CMOS STATIC RAM

文件：321.19 Kbytes 页数：13 Pages

ISSI

矽成半导体

Asynchronous SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support

ISSI

矽成半导体

Package：28-TSSOP（0.465"，11.80mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 256KBIT PAR 28TSOP I

ISSI, Integrated Silicon Solution Inc

Package：28-TSSOP（0.465"，11.80mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 256KBIT PAR 28TSOP I

ISSI, Integrated Silicon Solution Inc