DESCRIPTION

The ISSI IS62/65LV256AL is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 150 µW (typical) with CMOS input levels.

Easy memory expansion is provided by using an active LOW Chip Enable (CE). The active LOW Write Enable (WE) controls both writing and reading of the memory.

The IS62/65LV256AL is available in the JEDEC standard 28-pin SOJ, 28-pin SOP, and the 28-pin TSOP (Type I) package.

FEATURES

• High-speed access time: 20, 45 ns

• Automatic power-down when chip is deselected

• CMOS low power operation

— 17 µW (typical) CMOS standby

— 50 mW (typical) operating

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three-state outputs

• Industrial and Automotive temperatures available

• Lead-free available

IS65LV256AL-45TLA3属于集成电路（IC） > 存储器。北京矽成半导体有限公司制造生产的IS65LV256AL-45TLA3存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。