IS65C51216AL-55MLA3中文资料矽成半导体数据手册PDF规格书

DESCRIPTION

The ISSI IS62C51216AL and IS65C51216AL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access time: 45ns, 55ns

• CMOS low power operation

– 36 mW (typical) operating

– 12 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

– 4.5V--5.5V Vdd

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Automotive temperature (-40°C to +125°C)

• Lead-free available