DESCRIPTION

The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

When CE1 is HIGH or CE2 is LOW(deselected),the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip Enable inputs,CE1andCE2.The active LOW Write Enable (WE) controls both writing and reading of the memory.

FEATURES

• High-speed access time: 35, 45 ns

• Low active power: 100 mW (typical)

• Low standby power: 20 µW (typical) CMOS standby

• Output Enable (OE) and two Chip Enable

(CE1 and CE2) inputs for ease in applications

• Fully static operation: no clock or refresh required

• TTL compatible inputs and outputs

• Single 5V (±10) power supply

• Commercial, Industrial, and Automotive temperature ranges available

• Standard Pin Confguration:

— 32-pin SOP/ 32-pin TSOP (Type 1)

• Lead free available

IS65C1024AL属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS65C1024AL存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。