512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

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512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

矽成半导体

512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

矽成半导体

512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

矽成半导体

512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

矽成半导体

512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

矽成半导体

512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

矽成半导体

512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

矽成半导体

512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC

FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin ind

文件：871.04 Kbytes 页数：20 Pages

ISSI

矽成半导体

Serial SRAM & Low Pin Count SRAM

·Broad Solution:- x8, x16, and x32 configurations available- 5V/3.3V/1.8V VDD Power Supply- Commercial, Industrial, and Automotive Temperature (-40 °C to 125 °C) support- BGA, SOJ, SOP, sTSOP, TSOP packages available\n·ECC feature available for High Speed Asynchronous SRAMs\n·Long-term support

ISSI

矽成半导体